1/f noise is a fluctuation in the bulk conductance of semiconductors and metals. This noise could be a fluctuation in the number of the free electrons or in their mobility. Many experimental studies on homogenous layers have proved that the 1/f noise is a fluctuation in the mobility. There is no theoretical model of mobility 1/f noise. The McWhorter model for 1/f noise in MOSTs simply adds generation-recombination spectra from surface states. According to this model, estimates of the noise magnitude give unrealistic values. More important, the McWhorter model is a model on number fluctuations, because GR noise always is a fluctuation in number. There is no experimental proof of number fluctuations in the 1/f noise of MOSTs.
CITATION STYLE
Hooge, F. N. (2005). Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices. Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices (Vol. 151, pp. 3–10). Retrieved from http://www.springerlink.com/content/mx442470781j11u6
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