Extraction of Schottky diode parameters from forward current-voltage characteristics

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Abstract

It is shown that by using the forward current density-voltage (J-V) characteristics of a Schottky diode, a plot of d(V)/d(ln J) vs J and a plot of the function H(J) vs J, where H(J)≡V-n(kT/q)ln(J/A**T 2), will each give a straight line. The ideality factor n, the barrier height φB, and the series resistance R of the Schottky diode can be determined with one single I-V measurement. This procedure has been used successfully to study thermal annealing effects of W/GaAs Schottky contacts.

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Cheung, S. K., & Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current-voltage characteristics. Applied Physics Letters, 49(2), 85–87. https://doi.org/10.1063/1.97359

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