Exposure method for three-dimensional samples using phase shift mask

Abstract

An exposure method for realizing fine patterning on three-dimensional samples is described. Three-dimensional sample requires the different viewpoint from that of the proximity patterning. Concave areas can not be geometrically approached to the mask. The fine patterning becomes difficult due to the broadening of the exposure light. In this study, the phase shift mask is combined with the well-collimated mercury lamp. 5 μm-width line pattern is stably obtained on the 200 μm-deep cavity bottom.