Abstract
Bi 4 Ti 3 O 12 (BTO) and Bi 3.25 La 0.75 Ti 3 O 12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi 4 Ti 3 O 12 (BTO) and Bi 3.25 La 0.75 Ti 3 O 12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious. © (2010) Trans Tech Publications.
Author supplied keywords
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
Cite
CITATION STYLE
Yang, J.-P., Li, X.-A., Zuo, A.-Y., Yuan, Z.-B., & Zhu-Lin, W. (2010). Bi 4 Ti 3 O 12 and Bi 3.25 La 0.75 Ti 3 O 12 thin films prepared by RF magnetron sputtering. Key Engineering Materials (Vol. 434–435). https://doi.org/10.4028/www.scientific.net/KEM.434-435.296
Readers' Seniority
Readers' Discipline
