Memristive phase change memory

Abstract

The paper presents study on and simulation of resistive nonvolatile phase change memory (PCM) cell in NGSpice programming environment. The chalcogenide alloy based PCM cell model demonstrates switching between amorphous and crystalline phases. The crystalline factor, responsible for the phase change process, is programmed by applied variable electrical pulse. Parameters phase change, range of operating temperature, the crystalline factor are mapped and presented.