Carbon nanotube-polybithiophene photovoltaic devices with high open-circuit voltage

Abstract

We report the preparation of photovoltaic devices using modified single wall carbon nanotubes, SWNTs. Devices are produced stacking on top of fluorine-doped tin-oxide, an electrochemically deposited polybithiophene layer, a layer of SWNT blended with poly(3-octylthiophene) and an evaporated top metal contact, Ca/Al or Al. Ca/Al-top-electrode devices achieve open-circuit voltages of 1.81 V and average power conversion efficiency of 1.48% at irradiance of 15.5 W m-2, spectrally distributed following AM1.5. © 2007 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.