InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets

Abstract

InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metallorganic chemical vapor deposition on sapphire substrate with (112̄0) orientation (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the (11̄02) orientation (R-face). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs showed a sharp peak of light output at 415.6 nm that had a full width at half-maximum of 0.05 nm under pulsed current injection of 1.17 A at room temperature. The laser threshold current density was 9.6 kA/cm2.