Effect of In 2 S 3 buffer layer in TiO 2 /In 2 S 3 /CulnS 2 structure

Abstract

The anodized TiO 2 nanotube arrays (TNAs) have a benefit to provide large surfaces and straight electron transmitting routes to the electrode. However, it is difficult to fulfill with solid state electrolytes or photosensitive materials into the long TiO 2 nanotubes. The substrate of Ti/wave-like TiO 2 was prepared by peel-off the TNAs. The In 2 S 3 buffer layer between wave-like TiO 2 and CuInS 2 determines the photosensitivity of the Ti/wave-like TiO 2 /In 2 S 3 /CuInS 2 thin structure. The In 2 S 3 and CuInS 2 are well-crystallized at 300 o C. The CuInS 2 phase forms in In 2 S 3 layer due to Cu diffusion independent on the slight loss of sulfur. The CuInS 2 direct deposition on Ti/wave-like TiO 2 substrate can not exhibit photosensitivity. When CuInS 2 deposited on In 2 S 3 to form Ti/wave-like TiO 2 /In 2 S 3 /CuInS 2 structure, the short-circuit current and the open-circuit voltage increase with the thickness increase of In 2 S 3 layer while illuminated by 50 mW/cm 2 white light. © 2013 Trans Tech Publications, Switzerland.