NbO2selector device with Ge2Sb2Te5thermal barrier for low off current (300 nA) and low power operation

Abstract

This study investigated the impact of a Ge2Sb2Te5 (GST) thermal barrier on the performance of NbO2-based selector devices. Our findings showed that the GST barrier could significantly decrease the off-state leakage current from 3 μA to 300 nA without increasing the threshold switching voltage owing to its insulation properties and high thermal resistance. We also found that the GST barrier can effectively contain the Joule heat within the NbO2 switching region, as confirmed through a cryogenic analysis of the thermal resistance of GST. The results showed that the GST/NbO2 device had a thermal resistance 3.48 times higher than that of a single-layer NbO2 device. Our results provide design guidelines for utilizing a barrier layer to reduce the leakage current in low-power threshold switching devices.