Growth of low etch pit density homogeneous 2″ InP crystals using a newly developed thermal baffle

Abstract

Low Etch pit density 2″ InP crystals were grown by the liquid-encapsulated Czochralski (LEC) method using a newly developed thermal baffle. The average EPD of Sn-doped InP crystals was reduced to less than 3000 cm-2. The minimum average EPD was about 200 cm-2. Visible facets were observed and the crystal was somewhat rectangular. No lineage-type defects were observed even in the last portion of the crystal. Dislocation-free (DF) (EPD&IE500 cm-2) S-doped InP crystals were also obtained with lower S concentration using the newly developed baffle. The minimum S concentration for growing the DF crystal was 1.7×1018cm-3. © 1999 Publication Board, Japanese Journal of Applied Physics.