Low noise amplifier design of CMOS inductorless with noise cancellation technique

Abstract

This article presents the Low Noise Amplifier (LNA) design of CMOS Inductorless with noise cancellation (NC) technique for portable wireless receivers. An Inductorless CMOS LNA for multi-standard wireless applications with less-area, single-chip is presented. This NC technique is used to cancel out the noise involvement in LNAs at the output of matching device. The proposed Inductorless CMOS LNA designed in a CMOS 45nm GPDK technology process. The simulated results within the frequency range of 1.04GHz-1.8GHz are considered here. The maximum gain has achieved 20dB @ 1.04GHz, 23dB @ 1.8GHz and a low NF of 1.2dB @ 1.04GHz, 0.6dB @ 1.8GHz. The input and output reflection coefficients are obtained as less than-10dB it is desirable value to fit in this LNA.