Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures

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Abstract

Allan deviation provides a means to characterize the time-dependence of noise in oscillators and potentially identify the source characteristics. Measurements on a 130 nm, 7-stage ring oscillator show that the Allan deviation declines from 300 K to 150 K as expected, but surprisingly increases from 150 K to 11 K. At low temperatures, the measured Allan deviation can be well fit using a few random telegraph noise (RTN) sources over the range of a few kilohertz to a few gigahertz. Further, the RTN characteristics evolve to reveal an enhanced role in low-frequency noise at lower temperatures.

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CITATION STYLE

APA

Mukim, P., Shrestha, P. R., Madhavan, A., Prasad, N., Campbell, J., Brewer, F. D., … McClelland, J. J. (2023). Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures. IEEE Electron Device Letters, 44(9), 1547–1550. https://doi.org/10.1109/LED.2023.3294722

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