Electric-field-induced Raman scattering: Resonance, temperature, and screening effects

34Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.
Get full text

Abstract

A comprehensive, experimental characterization of electric-field-induced Raman scattering (EFIRS), a method to probe electric fields within a semiconductor depletion region, is given. Resonance effects, screening of the depletion region by photoexcited carriers, and the influence of temperature on the Raman signal of the symmetry-forbidden, electric-field-dependent LO phonon are discussed for the case of cleaved n-type GaAs surfaces. By comparing results from biased Schottky devices with those from adsorbate-covered surfaces, which were cleaved in ultrahigh vacuum, it is shown that the theoretically expected linear relation between the LO-phonon Raman signal and the Schottky-barrier height holds for the whole range of adsorbate-related potential barriers. In extreme resonance, higher-order effects can affect this relation drastically. However, choosing appropriate power densities of the exciting laser source leads to a partial screening of the space-charge layer by photoexcited carriers, which strongly attenuates these nonlinear effects. Hence a relatively simple calibration of the Raman signals in terms of absolute barrier heights becomes possible by using well-established Schottky-barrier heights as a calibration standard. © 1986 The American Physical Society.

References Powered by Scopus

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

3585Citations
N/AReaders
Get full text

The Raman effect in crystals

1977Citations
N/AReaders
Get full text

Einfluß Eines Elektrischen Feldes Auf Eine Optische Absorptionskante

548Citations
N/AReaders
Get full text

Cited by Powered by Scopus

Stark localization in GaAs-GaAlAs superlattices under an electric field

845Citations
N/AReaders
Get full text

Depletion-electric-field-induced changes in second-harmonic generation from GaAs

72Citations
N/AReaders
Get full text

Analysis of band bending at III-V semiconductor interfaces by Raman spectroscopy

69Citations
N/AReaders
Get full text

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Cite

CITATION STYLE

APA

Schäffler, F., & Abstreiter, G. (1986). Electric-field-induced Raman scattering: Resonance, temperature, and screening effects. Physical Review B, 34(6), 4017–4025. https://doi.org/10.1103/PhysRevB.34.4017

Readers' Seniority

Tooltip

PhD / Post grad / Masters / Doc 2

40%

Researcher 2

40%

Professor / Associate Prof. 1

20%

Readers' Discipline

Tooltip

Physics and Astronomy 3

75%

Business, Management and Accounting 1

25%

Save time finding and organizing research with Mendeley

Sign up for free