POSFET touch sensing devices: Bias circuit design based on the ACM MOS transistor compact model

Abstract

In this article we present a common-drain floating gate bias circuit design for POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) touch sensing devices. A graphical-aided methodology, intended to furnish a criterion that assures the selection of the most appropriate bias resistance value, is presented. © 2012 Springer Science+Business Media, LLC.