Deformations in (Al,Ga)As epitaxial layers wafer bonded on dissimilar substrates

Abstract

Deformations in heteroepitaxial layer stacks of AlGaAs/GaAs grown on GaAs are measured by triple crystal diffractometry before epitaxial liftoff and after subsequent wafer bonding on various substrates (GaAs, glass, Si, and LiNbO3). The tetragonal deformation present in the as-grown layer stack partially relaxes during epitaxial liftoff. The roughness of the as-grown layer stack gives rise to a bending of the atomic planes after wafer bonding. The widths of the x-ray diffraction peaks are used to estimate the misorientation of the lattice planes and compared with the atomic force microscopy measurements of the surface roughness. © 2001 American Institute of Physics.