Abstract
In this chapter, we will discuss the possible application ofInGaN:Mn layers for Intermediate Band Solar Cell devices. We will consider the reasons for choosing to study this promising system; why plasma-assisted molecular beam epitaxy is the method of choice to produce such structures; the specific problems associated with InGaN growth and the progress made so far in achieving this objective. We also discuss briefly other possible dopants for IBSCs based on InGaN. © Springer-Verlag Berlin Heidelberg 2012.
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CITATION STYLE
Foxon, C. T., Novikov, S. V., & Campion, R. P. (2012). InGaN technology for IBSC applications. In Springer Series in Optical Sciences (Vol. 165, pp. 309–319). https://doi.org/10.1007/978-3-642-23369-2_12
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