Low-Voltage High-Speed Ring Oscillator with a-InGaZnO TFTs

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Abstract

This paper presents a high-speed ring oscillator (RO) with amorphous Indium-Gallium-Zinc-Oxide Thin-film transistors (a-IGZO TFTs). The proposed RO reduces the delay of a single stage inverter using intermediate signals generated within the RO, hence, improving the speed. To validate the proposed idea, two conventional ROs (with diode-load load inverter and bootstrapped pseudo-CMOS inverter) and the proposed RO were fabricated at a temperature ≤ 180°C. Measured results of the proposed RO have shown a frequency and power-delay-product (PDP) of 173.2 kHz and 0.7 nJ at a supply voltage of 6V. Further, it shows approximately 155% (44%) increase in frequency and 14% (24.5%) decrease in PDP compared to diode-load inverter (bootstrapped pseudo-CMOS inverter) based ROs. Therefore, the proposed RO finds applications in low-voltage and high speed designs for timing signal generation.

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Tiwari, B., Bahubalindruni, P. G., Santos, A., Santa, A., Figueiredo, C., Pereira, M., … Barquinha, P. (2020). Low-Voltage High-Speed Ring Oscillator with a-InGaZnO TFTs. IEEE Journal of the Electron Devices Society, 8, 584–588. https://doi.org/10.1109/JEDS.2020.2997101

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