Laser-induced damage threshold of silicon under combined millisecond and nanosecond laser irradiation

Abstract

The laser-silicon interaction process was investigated with the superposed radiation of two pulsed Nd:YAG lasers. A pulse duration of 1 millisecond (ms) was superposed by 7 nanosecond (ns) pulses, creating a combined pulse laser (CPL). The time-resolved surface temperature of silicon was measured by an infrared radiation pyrometer. The melting thresholds of silicon were attained for a single ms laser and a CPL by infrared radiometry and time-resolved reflectance. The concept of threshold boundary was proposed, and a fitted curve of threshold boundary was obtained. An axisymmetric model was established for laser heating of silicon. The transient temperature fields were obtained for single ms laser and CPL irradiation using finite element analysis. The numerical results were validated experimentally, and an obvious decrease in melting threshold was found under CPL irradiation. That is attributed to pre-heating by the ms laser and the surface damage caused by the ns laser.