First-principles study of phosphorus diffusion in silicon: Interstitial- and vacancy-mediated diffusion mechanisms

Liu, X. Y., Windl, W., Beardmore, K. M., & Masquelier, M. P. (2003). First-principles study of phosphorus diffusion in silicon: Interstitial- and vacancy-mediated diffusion mechanisms. Applied Physics Letters, 82(12), 1839–1841. https://doi.org/10.1063/1.1562342

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First-principles study of phosphorus diffusion in silicon: Interstitial- and vacancy-mediated diffusion mechanisms

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