Time resolved imaging of carrier and thermal transport in silicon

24Citations
Citations of this article
40Readers
Mendeley users who have this article in their library.
Get full text

Abstract

We use ultrashort optical pulses to microscopically image carrier and thermal diffusion in two spatial dimensions in pristine and mechanically polished surfaces of crystalline silicon. By decomposing changes in reflectivity in the latter sample into a transient component that varies with delay time and a steady-state component that varies with pump chopping frequency, the influence of thermal diffusion is isolated from that of carrier diffusion and recombination. Additionally, studies using carrier injection density as a parameter are used to clearly identify the carrier recombination pathway. © 2010 American Institute of Physics.

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Cite

CITATION STYLE

APA

Hurley, D. H., Wright, O. B., Matsuda, O., & Shinde, S. L. (2010). Time resolved imaging of carrier and thermal transport in silicon. Journal of Applied Physics, 107(2). https://doi.org/10.1063/1.3272827

Readers' Seniority

Tooltip

PhD / Post grad / Masters / Doc 15

44%

Researcher 13

38%

Professor / Associate Prof. 5

15%

Lecturer / Post doc 1

3%

Readers' Discipline

Tooltip

Physics and Astronomy 14

44%

Engineering 8

25%

Materials Science 6

19%

Chemistry 4

13%

Save time finding and organizing research with Mendeley

Sign up for free