A Dopingless Tunnel FET and MOSFET-Based Comparative Study of a Simple Current Mirror

Abstract

This paper discusses a simple current mirror (SCM) based on a novel dopingless tunnel FET (DLTFET) and compares it with existing MOSFET technology. The SCM is used to make a current control current source (CCCS), and an ideal SCM requires a device that must produce a constant current in its saturation region, and DLTFET is one of that devices. The simulation-based comparative analysis of SCM is done at 20 nm for N-type DLTFET and 22 nm, 32 nm, and 45 nm for NMOS in terms of current error, leakage current, input, and output resistance, transient analysis parameters. The simulated results have shown that DLTFET SCM performs better in comparison with MOS SCM as it shows the negligible current error, 99.99% lesser input resistance, and 99.6% greater output resistance.