Damage and strain in single-layer graphene induced by very-low-energy electron-beam irradiation

Abstract

From the analysis of the ratio of D peak intensity to G peak intensity in Raman spectroscopy, electron beam irradiation with energies of 100 eV was found to induce damage in single-layer graphene. The damage becomes larger with decreasing electron beam energy. Internal strain in graphene induced by damage under irradiation is further evaluated based on G peak shifts. The dose-dependent internal strain was approximately 2.22% cm2/mC at 100 eV and 2.65 × 10-2% cm2/mC at 500 eV. The strain induced by the irradiation showed strong dependence on electron energy. © 2013 American Institute of Physics.