Effects of mask material conductivity on lateral undercut etching in silicon nano-pillar fabrication

Abstract

High aspect ratio silicon structures have gained significant interest due to their vast applications. Minimal lateral etch under the mask is essential to achieve such high aspect ratio structures. Previously, the authors reported that chromium oxide is better than metallic chromium as a hard mask for silicon etching in terms of etch rate and selectivity to resist during mask structure fabrication. Here, it is reported that a metal oxide etch mask also gives less lateral etch than a metal etch mask. Following mask structure fabrication by electron beam lithography and lift-off, silicon was etched using a nonswitching (i.e., SF6 and C4F8 gases simultaneously injected into a chamber) pseudo-Bosch process. The amount of lateral etching right underneath the mask is less (roughly half) for Cr2O3 and Al2O3 masks than Cr or Al masks. One plausible explanation for the difference is the metal-assisted plasma etching effect where the metal catalyzes the chemical reaction by injecting holes into the silicon in contact. It is also reported that a higher bias power leads to less undercut than a lower one, due to increased and more directional physical bombardment by ions.