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InP based very-low voltage electro-optic intensity modulators in conventional waveguides

Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2015 (2015) 371p
DOI: 10.1364/iprsn.2015.im2b.2
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Abstract

Very-low drive voltage intensity modulators were fabricated in InP epitaxial layers containing MQW cores using conventional waveguides and processing. 1 cm long electrode devices have one arm driven Vπ of 1.6 V at 1550 nm. © 2015 Optical Society of America.

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CITATION STYLE

APA

Kim, N. K., Bhasker, P., Dogru, S., & Dagli, N. (2015). InP based very-low voltage electro-optic intensity modulators in conventional waveguides. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2015 (p. 371p). Optical Society of America (OSA). https://doi.org/10.1364/iprsn.2015.im2b.2

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