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Thermal conductivity of SiC-B4C materials obtained by reaction-sintering method

IOP Conference Series: Materials Science and Engineering (2020) 848(1)
DOI: 10.1088/1757-899X/848/1/012066
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Abstract

In this research, temperature dependences of the thermal conductivity of reaction-bonded SiC - B4C composite materials at the temperature range of 293 - 1400 K were investigated. The effect of B4C concentration on thermal conductivity is shown. The thermal conductivity of SiC - B4C materials were compared with the thermal conductivity of materials based on silicon carbide and boron carbide obtained by different methods.

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CITATION STYLE

APA

Perevislov, S. N., Motaylo, E. S., Novoselov, E. S., & Nesmelov, D. D. (2020). Thermal conductivity of SiC-B4C materials obtained by reaction-sintering method. In IOP Conference Series: Materials Science and Engineering (Vol. 848). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/848/1/012066

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