Noise and Tunneling Through the 2.5 nm Gate Oxide in Soi MOSFETs

Lukyanchikova, N., Simoen, E., Mercha, A., & Claeys, C. (2006). Noise and Tunneling Through the 2.5 nm Gate Oxide in Soi MOSFETs. In Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices (pp. 129–136). Kluwer Academic Publishers. https://doi.org/10.1007/1-4020-2170-4_15