STT-MRAM A Universal Memory from Device to Circuit

Abstract

In the present multi-core technology era, the integration of accelerating numbers of cores into the microprocessor has a significant high power consumption issue. Due to the change of technology, the scaling down of CMOS is taking place, resulting in an increase of leakage current in the sub-threshold region increasing the device’s power. In the present scenario, all the electronic devices use nonvolatile memory, and power is the main center of attraction of all the memories. To overcome all the power-related issues, Spintronics—spin-based memory is the latest technology. Due to the effects of spins in MRAM, this type of memory can be considered a cohort embedded memory technology, and it can be treated as ubiquitous memory. This paper reviews with an introduction of memory, followed by MRAM’s working principle, then reading, writing, and MRAM mechanism have been discussed. Technologies to enhance writing ability and reliability issues are also discussed.