Dopant dependence on passivation and reactivation of carrier after hydrogenation

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Abstract

The formation of hydrogen (H)-related complexes and H effects on boron (B) and phosphorus (P) dopants was investigated in B- or P-doped silicon (Si) crystal treated with high concentration of H. The reactivation process of dopant carriers by annealing after hydrogenation was significantly different between the p -type and n -type specimens. The difference is likely to be attributable to the formation of H-related defects based on the stable sites of the H atoms, i.e., complicated H multiple trapping centers are formed by bond breaking due to H atoms in only p -type B-doped Si. © 2007 American Institute of Physics.

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Fukata, N., Sato, S., Morihiro, H., Murakami, K., Ishioka, K., Kitajima, M., & Hishita, S. (2007). Dopant dependence on passivation and reactivation of carrier after hydrogenation. Journal of Applied Physics, 101(4). https://doi.org/10.1063/1.2654831

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