Ternary flash memory device based on polycarbazole with ZrO2 composite materials

Abstract

The poly[2,7-9-(9-heptadecanyl)-9H-carbazole-co-benzo[4,5] imidazole[2,1-a]isoindol-11-one] (PCz-O) was synthesized by Suzuki coupling reaction, which structure was verified by FT-IR, 1H NMR and 13C NMR. The spin coating method was used to prepare RRAM devices based on PCz-O: ZrO2 nanoparticle active layer, and the devices exhibited ternary switching. Through a series of performance tests, both pure polymer device and composited with ZrO2 NPs devices had ternary storage characteristics. Among them, the content of composited with 8 wt% ZrO2 showed the most excellent ternary storage characteristics. The ON/OFF current ratio was 2.60 × 104, and the threshold voltage Vth1/Vth2 was −0.60 V/-1.00 V. The current is stable for 10000 s in both ON/OFF states. After 3300 times of reading, the switch state current of the devices had slight variation. In addition, the switching mechanism of the device was also discussed. Through carefully testing and analyzing, the devices had good stability and durability, and had potential application value in terms of data storage.