Compound Semiconductor Device and IC

Abstract

The first generation of semiconductor material is represented by Si and Ge in Group IV, and the second and third generations of semiconductor materials are mainly compound semiconductors (CS), e.g., GaAs and InP (the second generation) as well as GaN and SiC (the third generation of CS materials). Those compound semiconductor (CS)-based discrete devices and ICs have superior capability than Si-based discrete devices and ICs; e.g., GaN is suitable for higher operation frequency, SiC for higher operation temperature and voltage, InAs and GaAs capable for light emission, and MoS2 or WSe2 with higher mobility. These CS materials have superior material characteristics than Si, e.g., larger bandgap, direct bandgap for light generation, etc. However, Group III-V or II-VI CS materials are considered as cross-contaminants to Si devices in modern CMOS fab. Also, only small diameter substrate available (e.g., 150 mm in diameter or smaller), thus it is slow and difficult in developing and manufacturing full CS-based devices and ICs. Instead, enabling technology for forming high quality CS material on SOI or bulk Si substrate (with large wafer size or on selective areas) is highly desirable, so that not only the capability of Si-based IC can be expanded, but also accelerating CS-based devices and ICs in manufacturing toward many new applications.