State Dynamic Modeling using Ionic Conduction Phenomenon for TiO2-based Memristive Thin Film

Abstract

In this work a SPICE model was developed for metal-insulator-metal (MIM)-based memristors. The proposed model was achieved by combining the current conduction mechanisms with the dynamical state variable phenomenon. To account for ionic conduction in memristor, the Mott-Gurney law for ion hopping was incorporated in the state variable derivative. As compared to the experimental data, the proposed model is well matched with the measured data. The memristance and root mean square (RMS) error were calculated to be 120 Ω and 0.02 respectively. Simulating the proposed model at frequencies greater than unity formed a smaller hysteresis loop area.