14 transistors CNTFET and CMOS full adder cell for modified GDI technique

Abstract

Adder Is Basic Unit For Any Digital System, Dsp And Microprocessor. The Main Issue In Design High Speed Full Adder Cell With The Low Power Dissipation. As We Know Cmos Technology Used For Vlsi Designing Cmos Has Many Drawbacks As High Power Short Channel Effect Etc. Then Cntfet (Carbon Nanotube Field Effect Transistor) Has Been Developed Which Has Same Structure As Cmos. The Difference Between Structure Of Cmos And Cntfet Is Their Channel. In Cntfet Channel Is Replaced By Carbon Nanotube. In This Paper We Compare Full Adder Circuit Using Cntfet With Gdi Technique And Cmos Implementation Of Adder Which Gdi Technique. Gdi Technique Is Used For Speed And Power Optimization In Digital Circuit. This Can Also Reduce The Count Of Transistor Which Affects The Size Of Device.