III-V semiconductor nanowires on Si by selective-area metal-organic vapor phase epitaxy

Abstract

The III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and optical devices on Si platforms.We review positioncontrolled growth of III-V NWs on Si substrate by selective-area growth and discuss how to control growth directions of III-V NW on Si. Finally, we demonstrate the integrations of III-V NW-based light-emitting diodes (LEDs) array on Si. These demonstrations should have broad applications in laser diodes and photodiodeswith functionality not enabled by conventional NW. © Springer-Verlag Berlin Heidelberg 2012.