Materials and Physical Properties of High-K Oxide Films

Abstract

Rapid shrinking in device dimensions to follow Moore's law calls for replacement of SiO 2 by new gate insulators in future generations of MOSFETs. Among many desirable properties, potential candidates must have a higher dielectric constant, low leakage current, and thermal stability against reaction or diffusion to ensure sharp interfaces with both the substrate Si and the gate metal (or poly-Si). Extensive characterization of such materials in thin-film form is crucial not only for selection of the alternative gate dielectrics and processes, but also for development of appropriate metrology of the high-k films on Si. This chapter will review recent results on materials and physical properties of thin film SrTiO 3 and transition metal oxides (HfO 2).