Defects in Cu2 O studied by deep level transient spectroscopy

Abstract

Hole traps in p -type Cu2 O were studied by means of deep level transient spectroscopy in the heterostructure of p- Cu2 Oi-ZnOn-ZnO. In addition to the trap level at about 0.45 eV from the valance band edge, which is already reported as being due to Cu vacancy, we found a new trap level at about 0.25 eV. The new trap is tentatively assigned as Cu-di-vacancy from the trap concentration dependence on oxygen flow rate and substrate temperature. © 2006 American Institute of Physics.