Two-photon shape-modulated maskless lithography of positive photoresist of S1813

Abstract

The authors systematically investigated influence factors for two-photon maskless lithography of S1813 photoresist. A trench with a width of 155 nm, about 1/5 of the laser wavelength, was fabricated by accurate tuning the scanning speed. Two-photon shape-modulated maskless lithography, a method which employs different combined scanning and exposing approaches was proposed and studied. The patterns of rectangle, parallelogram, rice grain, arc, and “x” letter, and the quatrefoil hole patterns with different shape hearts, were all fabricated by using this method. This work is a protocol for lithography of S1813 photoresist with a high spatial resolution and flexibility. The fabricated trenches and diverse micro/nano patterns can be applied in the fabrication of integrated circuits, metamaterials structures, and SERS and biosensor substrates. This work will be conducive to the development and application of the two-photon maskless lithography of S1813.