Advances in group III-nitride-based deep UV light-emitting diode technology

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Abstract

The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary of the state-of-the-art in device performance and enumeration of applications. Performance-limiting factors for high-efficiency UV LEDs are identified and recent advances in the development of deep UV emitters are presented. © 2011 IOP Publishing Ltd.

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Kneissl, M., Kolbe, T., Chua, C., Kueller, V., Lobo, N., Stellmach, J., … Weyers, M. (2011). Advances in group III-nitride-based deep UV light-emitting diode technology. Semiconductor Science and Technology, 26(1). https://doi.org/10.1088/0268-1242/26/1/014036

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