Abstract
Experiments are reported on the lateral photoeffect in a novel type of amorphous superlattice consisting of 6 Å of Ti and 13 Å of Si grown on Si substrate. The spectral, temperature, bias voltage, and time dependences have been measured for this new position sensitive detector.
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CITATION STYLE
APA
Levine, B. F., Willens, R. H., Bethea, C. G., & Brasen, D. (1986). Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti. Applied Physics Letters, 49(23), 1608–1610. https://doi.org/10.1063/1.97295
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