Magnetoresistance of spin glass NiMn/Ni thin film

5Citations
Citations of this article
1Readers
Mendeley users who have this article in their library.
Get full text

Abstract

We report magnetoresistance measurements on Ni1-xMnx/SiO2/Ni (x = 0.27, 0.28) films with various thickness of SiO2 layer as a function of field and temperature. In the temperature dependence of the magnetoresistance, we observed that the temperature Tf at which the disagreement between field cooled and zero field cooled data appears increased with decreasing thickness of SiO2 layer. Tf was higher than that of Ni73Mn27 film. This result suggests that the spin glass transition temperature Tg increased with decreasing thickness of SiO2 layer. The increase of Tg can be interpreted by magnetic interaction between magnetic moments in NiMn and Ni layers via conduction electrons leaking through the SiO2 layer. © 1992.

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Cite

CITATION STYLE

APA

Ando, T., Sato, T., & Ohta, E. (1992). Magnetoresistance of spin glass NiMn/Ni thin film. Journal of Magnetism and Magnetic Materials, 113(1–3), 115–118. https://doi.org/10.1016/0304-8853(92)91255-R

Readers' Seniority

Tooltip

PhD / Post grad / Masters / Doc 1

100%

Readers' Discipline

Tooltip

Materials Science 1

100%

Save time finding and organizing research with Mendeley

Sign up for free