Hopping conductivity in disordered systems

Abstract

By considering a model in which charge is transported via phonon-induced tunneling of electrons between localized states which are randomly distributed in energy and position, Mott has obtained an electrical conductivity of the form σexp[-(λα3ρ0kT)14]. Here T is the temperature of the system, ρ0 is the density of states at the Fermi level, λ is a dimensionless constant, and α-1 is the distance for exponential decay of the wave functions. We rederive these results, relating λ to the critical density of a certain dimensionless percolation problem, and we estimate λ to be approximately 16. The applicability of the model to experimental observations on amorphous Ge, Si, and C is discussed. © 1971 The American Physical Society.