Modulation intersubband absorption and the hot electron mechanism in heterostructure of AL1-yInyN/Ga1-xInxN

Abstract

We have theoretically investigated the modulation of the intersubband absorption coefficient of the heterostructure of Al1-yInyN/Ga1-xInxN with an optimum well width of 1.5 nm. The value of the intersubband absorption coefficient increased significantly as a function of the electric field applied. The scattering energy rate between electrons and LO phonons as a function of the hot electron temperature, taking into the account the non-equilibrium optical phonon accumulation model, is lower than without taking this model into account. The models of the modulation of the intersubband absorption were studied when the effect of the non-equilibrium optical phonon accumulation as a function of the applied electric field was taken into account, and also when this effect was not taken into account. Due to the changing rate of the optical phonons with the wave vector q, the modulation of the intersubband absorption with non-equilibrium optical phonon accumulation was higher than that without non-equilibrium optical phonon accumulation.