Thickness-dependent dielectric and energy storage properties of (Pb0.96La0.04)(Zr0.98Ti0.02)O3 antiferroelectric thin films

Abstract

A series of dense and uniform (Pb0.96La0.04)(Zr0.98Ti0.02)O3 (PLZT) thin films with different thicknesses have been deposited on (La2/3Sr1/3)MnO3/SrTiO3 substrates by a modified chemical solution deposition method. Structural and electrical studies indicate that PLZT thin films show single phase composition and typical antiferroelectric (AFE) characteristics. By increasing the film thickness, the dielectric loss of PLZT thin films is reduced and the hysteresis loops are tailored. The energy storage efficiency increases from 56.8% to 74.1%, while a high energy density of ∼20J/cm3 is maintained under an electric field of 1200kV/cm. Additionally, the operating frequencies also have distinct influence on the hysteresis loop shape and the energy storage properties, indicating that energy storage performance of AFE thin films can be enhanced by tuning both film thickness and operating frequencies.