Kagome Magnets: The Emerging Materials for Spintronic Memories

Abstract

Recent developments in the field of topological quantum materials have stimulated the search for materials that could serve as the building blocks for next-generation memory applications. Due to their intriguing topological properties, such as flat bands, Dirac nodes, and Weyl points, kagome magnets are anticipated to be the leading materials for this application. In this mini review, we discuss some of the recent advancements in binary kagome magnets, both ferromagnetic and anti-ferromagnetic, for use as emerging memory devices. First, we discuss ferromagnetic kagome magnets, specifically Fe 3 Sn 2 , and then we discuss non-collinear antiferromagnetic kagome magnets, Mn 3 Sn and Mn 3 Ir. Finally, we discuss collinear antiferromagnetic kagome magnet, FeSn. In each of the aforementioned sections, we begin with a discussion of their topological, structural, and magnetic properties, followed by application-specific studies such as spin-orbit torques (SOT). In the final section, we discuss the current state of kagome magnets for efficient, faster, denser, and reliable memory technologies with focus on the SOT switching and observation/manipulation of skyrmions.