Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride

2Citations
Citations of this article
16Readers
Mendeley users who have this article in their library.
Get full text

Abstract

The nitrogen 1s near edge X-ray absorption fine structure (NEXAFS) of gallium nitride (GaN) shows a strong natural linear dichroism that arises from its anisotropic wurtzite structure. An additional spectroscopic variation arises from lattice strain in epitaxially grown GaN thin films. This variation is directly proportional to the degree of strain for some spectroscopic features. This strain variation is interpreted with the aid of density functional theory calculations.

Author supplied keywords

Cite

CITATION STYLE

APA

Ritchie, A., Eger, S., Wright, C., Chelladurai, D., Borrowman, C., Olovsson, W., … Urquhart, S. (2014). Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride. Applied Surface Science, 316(1), 232–236. https://doi.org/10.1016/j.apsusc.2014.07.070

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free